Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing |
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Authors: | Li Bing-Sheng Zhang Chong-Hong Yang Yi-Tao Zhou Li-Hong and Zhang Hong-Hua |
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Institution: | Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China |
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Abstract: | Electrically active defects in the phosphor-doped single-crystal
silicon, induced by helium-ion irradiation under thermal annealing,
have been investigated. Isothermal charge-sensitive deep-level
transient spectroscopy was employed to study the activation energy
and capture cross-section of helium-induced defects in silicon
samples. It was shown that the activation energy levels produced by
helium-ion irradiation first increased with increasing annealing
temperature, with the maximum value of the activation energy
occurring at 873K, and reduced with further increase of the
annealing temperature. The energy levels of defects in the samples
annealed at 873 and 1073K are found to be located near the
mid-forbidden energy gap level so that they can act as thermally
stable carrier recombination centres. |
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Keywords: | helium-ion irradiation defect activation energy charge-sensitive deep level transient
spectroscopy |
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