Radiation enhanced outdiffusion during ion implantation |
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Authors: | A. Anttila M. Hautala |
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Affiliation: | (1) Department of Physics, University of Helsinki, Siltavuorenpenger 20 M, SF-00170 Helsinki 17, Finland |
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Abstract: | For a systematic prediction of the radiation-enhanced outdiffusion occurring during implantation, the use of a model based on the effect of vacancy flow on diffusion is described. The model agrees reasonably well with experiments in all twentysix measured cases. For the systematic understanding of the radiation enhanced outdiffusion, an approximative diagram based on the activation energy of self-diffusion is constructed for all pure elements and its application possibilities are discussed. |
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Keywords: | 61.70T 61.80J |
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