| 0.6μm CMOS分布式放大器设计 |
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| 引用本文： | 陈勖,王志功,李伟.0.6μm CMOS分布式放大器设计[J].固体电子学研究与进展,2007,27(1):58-62. |
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| 作者姓名： | 陈勖 王志功 李伟 |
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| 作者单位： | 东南大学射频与光电集成电路研究所,南京,210096 |
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| 摘 要： | 采用了国内0.6μm标准CMOS工艺设计实现了一种单片集成的分布式放大器。放大器采用四级级联结构,单元电路采用管联(cascode)结构以提高隔离度。在输入输出端50Ω匹配情况下,测试得到的频带宽度为0.1~4.0 GHz,增益为5.0±1.0 dB,输入输出的回波损耗分别小于-10 dB和-7 dB。在5 V供电下功耗约为110 mW。
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| 关 键 词： | 分布式放大器 电感 互补金属氧化物半导体 管联结构 |
| 文章编号： | 1000-3819(2007)01-058-05 |
| 修稿时间： | 2006-02-28 |
Design of 0.6 μm CMOS Distributed Amplifier |
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| CHEN Xu,WANG Zhigong,LI Wei.Design of 0.6 μm CMOS Distributed Amplifier[J].Research & Progress of Solid State Electronics,2007,27(1):58-62. |
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| Authors: | CHEN Xu WANG Zhigong LI Wei |
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| Abstract: | This paper presents the design of a fully-integrated four-stage distributed amplifier in standard 0.6 μm CMOS technology.The individual cell of the four cascaded stages is based on a cascode configuration to increase the isolation.On-wafer measurements have shown that this distributed amplifier achieved a gain 5.0±1.0 dB from 0.1 to 4.0 GHz when the input and output terminals are matched to 50 Ω,with the S11<-10 dB and S22<-7 dB.The power consumption is about 110mW under a 5 V supply. |
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| Keywords: | distributed amplifier inductor CMOS cascode structure |
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