Image-potential-induced surface state at Si(100) |
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| Authors: | M. Kutschera M. Weinelt M. Rohlfing T. Fauster |
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| Affiliation: | 1.Lehrstuhl für Festk?rperphysik,Universit?t Erlangen-Nürnberg,Erlangen,Germany;2.Max-Born-Institut,Berlin,Germany;3.Fachbereich Physik,Universit?t Osnabrück,Osnabrück,Germany |
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| Abstract: | We have identified a surface state on Si(100) (2×1) at a binding energy of 0.69±0.05 eV with respect to the vacuum level. Band-structure calculations within the GW method reveal that almost 80% of the probability density of the resonance is located in front of the surface. We therefore assign the surface resonance to an image-potential state. It has a lifetime of about 10 fs and contributes significantly to two-photon photoemission from Si(100). PACS 73.20.At; 79.60.Bm; 79.60.Dp; 79.60.Ht |
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