Quantum tunneling of light particles in metals |
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Authors: | H Grabert U Weiss H R Schober |
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Institution: | 1. Institut für Theoretische Physik, Universit?t Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, FRG 2. Institut für Festk?rperforschung, Kernforschungsanlage Jülich, D-5170, Jülich, FRG 3. Institut für Festk?rperforschung, Kernforschungsanlage Jülich, D-5170, Jülich, FRG
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Abstract: | The motion of a particle in a metallic crystal is studied for low temperatures where transitions between adjacent interstitial
sites are caused by quantum tunneling. The influence of electrons and phonons on the hopping rate is taken into account by
means of a functional integral method. The electronic influence may effectively be described by Ohmic damping which dominates
the low temperature behavior of the defect motion. When subsequent tunneling transitions are statistically independent, the
diffusion constant is found to obey a power law, D∼T2K−1, where K depends on the defect-electron interaction. This power law is limited at low temperatures by the effects of phonon
excitations. Near the transition between electron and phonon dominated behavior the diffusion constant has a minimum where
the precise temperature dependence of the rate depends not only on phonon spectra but also on the processes limiting phonon
lifetimes. |
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