n-SiC的电子拉曼散射及二级拉曼谱研究

研究了利用离子注入法得到的掺氮n-SiC拉曼光谱. 理论线形分析表明，与4H-SiC相比，6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小. 5145nm激发光下得到的电子拉曼散射光谱表明，k位处由1s(A₁)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条，4H-SiC中有二条；高频6303及635cm^-1处观察到的谱线被认为与深能级缺陷有关. 最后，利用纤锌矿型结构二级拉曼散射选择定则指认了6关键词：碳化硅电子拉曼散射轨道能谷分裂倍频谱

Electronic Raman scattering and the second-order Raman spectra of the n-type SiC

The Raman scattering spectra of the nitrogen doped n-SiC is studied. The theoretical line shape analysis indicates that, compared with 4H-SiC, the shift of the LO phonon-plasma coupled mode in 6H-SiC with free carrier concentration is smaller. From the electronic Raman spectra, which were obtained with laser excitation at 5145nm, there are four spectral lines in 6H-SiC and two lines in 4H-SiC, which correspond to the 1s(A₁) to 1s(E) valley orbit transitions at the inequivalent k site. The explanation of the high-frequency signals of 6303 and 635 cm^-1 is that they are velated with transitions at active deep level of defect. Finally, the second-order Raman features of 6H- and 4H-SiC are identified using the selection rules for second-order scattering in wurtzite structure.