| 给体-受体-给体窄带隙染料掺杂聚芴发光二极管 |
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| 引用本文： | 孙明亮,范素芹,阳仁强,曹镛. 给体-受体-给体窄带隙染料掺杂聚芴发光二极管[J]. 高等学校化学学报, 2010, 31(10): 2098-2101 |
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| 作者姓名： | 孙明亮 范素芹 阳仁强 曹镛 |
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| 作者单位： | 1. 华南理工大学高分子光电材料与器件研究所, 特种功能材料教育部重点实验室, 广州 510640; 2. 中国海洋大学材料科学与工程研究院, 青岛 266100 |
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| 基金项目： | 国家“九七三”计划项目(批准号:2009CB623600); 国家自然科学基金(批准号:50903078,50990065); 山东省中青年科学家奖励基金(批准号:BS2009CL036); 教育部博士点新教师基金(批准号:20090132120017)资助 |
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| 摘 要： | 合成了一系列给体-受体-给体型窄带隙荧光分子, 并将其作为掺杂剂与主体(Host)宽带隙聚芴共混制备发光二极管. 荧光分子为4,7-二呋喃-苯并噻二唑(O-S)、4,7-二噻吩-苯并噻二唑(S-S)、4,7-二(N-甲基吡咯)-苯并噻二唑(N-S)、4,7-二硒吩-苯并噻二唑(Se-S)和4,7-二(N-甲基吡咯)-苯并硒二唑(N-Se). 溶液中荧光分子的紫外-可见吸收峰位于447~472 nm, 荧光发射峰位于563~637 nm. 该系列荧光分子掺杂聚芴(PFO)发光器件的电致发光峰位于580~633 nm. 当器件结构为ITO/PEDOT/PVK/PFO+N-Se/Ba/Al时, 最大外量子效率为1.28%, 电流效率1.31 cd/A.
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| 关 键 词： | 给体-受体-给体 窄带隙 掺杂 发光二极管 |
| 收稿时间： | 2009-12-24 |
Donor-acceptor-donor Type Narrow-band-gap Dyes Doped Polyfluorene Light Emitting Diodes |
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| SUN Ming-Liang,FAN Su-Qin,YANG Ren-Qiang,CAO Yong. Donor-acceptor-donor Type Narrow-band-gap Dyes Doped Polyfluorene Light Emitting Diodes[J]. Chemical Research In Chinese Universities, 2010, 31(10): 2098-2101 |
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| Authors: | SUN Ming-Liang FAN Su-Qin YANG Ren-Qiang CAO Yong |
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| Affiliation: | 1. Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Special Functional Materials, Ministry of Education, South China University of Technology, Guangzhou 510640, China;2. Institute of Material Science and Engineering, Ocean University of China, Qingdao 266100, China |
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| Abstract: | A series of donor-acceptor-donor(DAD) type narrow-band-gap fluorescent organic dyes were used as dopants for polymer light emitting diodes. The solutions of the organic molecules show absorbance peaks between 447 and 472 nm. The optical band gap decreases in the order: O-S and S-S>N-S>Se-S>N-Se. The PL emission peak is around 563—637 nm depending on chemical structure. Energy transfer from polyfluorene to fluorescent organic dyes was observed for both photoluminescence and electroluminescence(EL) of the fluorescent dyes and polyfluorene composite film. The EL peak red shifted in the order are O-S, S-S, N-S, Se-S and N-Se, which agree with the optical band gap. The highest external quantum efficiency achieved with the device configuration ITO/PEDOT/PVK/PFO+N-Se/Ba/Al is 1.28% with luminous efficiency 1.31 cd/A peaked at 633 nm. |
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| Keywords: | Donor-acceptor-donor Narrow-band-gap Dopant Light emitting diodes |
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