Scattering mechanism in doped semiconductors with a smooth random field

The scattering mechanism of charge carriers in doped compensated semiconductors with a smooth random field is considered in the interval of temperatures 4–100°K and of impurity concentrations 10¹⁴–10¹⁸ cm^–3. It is shown that in the conditions mentioned above at the lowest temperatures scattering in the Coulomb field associated with charged impurity dominates, while at elevated temperatures scattering in the smooth random field is important. Scattering by phonons and by resonant and virtual levels associated with the random potential is insignificant in the present conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 23–27, February, 1984.