Excess noise of the silicon surface barrier detectors |
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| Authors: | J Vojtek J šikula R Tykva |
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| Institution: | 1. Technical University of Ko?ice, Park Komenského 13, 041 20, Ko?ice, Czechoslovakia
2. Technical University of Brno, Barvi?ova 85, 662 37, Brno, Czechoslovakia
3. Institute of Organic Chemistry and Biochemistry, Czech. Acad. Sci., Flemingovo n. 2, 166 10, Praha 6, Czechoslovakia
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| Abstract: | From our experiments the following conclusions follow:| i) |
The value of a in the l/f
a
law lies within the intervala  (0.6, 1.0).
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The detectors featuring low reverse currentI
c havea  1.0.
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The cutoff frequency of the noise characteristicf
c is at low frequency compared with the using frequency band of the detector.
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The excess noise is given by generation-recombination process in the volume of the space — charge region of the sample.
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| Keywords: | |
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