Electronic structures of alloy quantum dots with nonuniform composition |
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Authors: | H Ye P Lu Z Yu D Wang Y Liu |
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Institution: | 1.Key Laboratory of Information Photonics and Optical Communications, Ministry of Education,Beijing University of Posts and Telecommunications,Beijing,P.R. China |
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Abstract: | In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on electronic structure is
analyzed in depth. The equilibrium composition profiles in experimentally observed dome and barn shaped GeSi/Si QDs are determined
by combining the finite element method and the method of moving asymptotes. Due to the composition variation, the total band
edge of heavy hole is dominated by the band offset and spin-orbit coupling rather than the strain effect. The numerical results
reveal that the wave function of heavy hole trends to be localized in the Ge-rich region at the top of the large QD. Moreover,
the size effect gradually compensates the composition effect as the size of QD decreases. |
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