Deconvolution of temperature dependence of conductivity,its reduced activation energy,and Hall-effect data for analysing impurity conduction in n-ZnSe |
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Authors: | Yasutomo Kajikawa |
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Institution: | 1. Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, Japan kajikawa@riko.shimane-u.ac.jp https://orcid.org/0000-0001-7531-5048 |
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Abstract: | ABSTRACT The temperature dependence of the reduced activation energy w?=?ε/kBT of the conductivity σ has been utilised for determining the impurity conduction mechanism in doped semiconductors in many studies. Herein, the formula for deconvoluting w when plural conduction mechanisms appear is used to confirm the analysis of the data of the Hall-effect measurements on Al-doped n-ZnSe samples. The analysis is performed on the basis of an impurity-Hubbard-band model which includes ε 2 conduction in the top Hubbard band as well as ε 3 and Efros-Shklovskii (ES) variable-range hopping (VRH) conduction processes in the bottom Hubbard band. As the result of the analysis, transitions among the three hopping conduction mechanisms of ε 2, ε 3, and ES VRH are clearly shown in the temperature dependence of w as well as in that of the Hall mobility, which are hardly noticed in the temperature dependence of σ. In addition, the power-law exponent of the prefactor of ES VRH conductivity is determined through the fit to the temperature dependence of w to show that it decreases from ~ 1.5 to ~ 0 with increasing net donor concentration. |
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Keywords: | Hopping conduction Hall effect ZnSe |
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