Laser and ion beams graphene oxide reduction for microelectronic devices |
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Authors: | L Torrisi V Havranek A Torrisi M Cutroneo L Silipigni |
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Institution: | 1. Dipartimento di Scienze Matematiche, Informatiche, Scienze Fisiche e Scienze della Terra – MIFT, Università degli Studi di Messina, Messina, Italy;2. INFN-Sezione di Catania, Catania, Italylorenzo.torrisi@unime.it https://orcid.org/0000-0003-0853-136X;4. Nuclear Physics Institute, AS CR, Rez, Czech Republic;5. INFN-Sezione di Catania, Catania, Italy;6. Nuclear Physics Institute, AS CR, Rez, Czech Republic https://orcid.org/0000-0003-2404-5062;7. Nuclear Physics Institute, AS CR, Rez, Czech Republic;8. INFN-Sezione di Catania, Catania, Italy |
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Abstract: | Reduced graphene oxide (rGO) is a two-dimensional material, which is attracting increasing attention due to its special properties. It can be obtained by laser or ion beam irradiations of pristine graphene oxide (GO). It shows high mechanical resistance, considerable electric and thermal conductivity. All these rGO characteristics together with the high number of molecular species that can be embedded between its layers, make graphene oxide a potential material for electronic sensors or efficient support on which conductive strips, condensers, and micrometric electronic devices can be designed. In particular, as it is described in this paper, it is possible to carry out high spatial resolution lithography in GO by using a focused laser or micro ion beam in order to design macro, micro, and submicron geometrical structures. The use of the reduced graphene oxide for the laser and ion beam fabrication of electrical resistances and capacitances is presented. |
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Keywords: | Gaphene oxide ion beam reduction lithography laser ion beam electronic device |
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