| 低温衬底的射频反应溅射法制备a-SiO_2薄膜的研究 |
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| 引用本文： | 张祖新,李伟,张文炳. 低温衬底的射频反应溅射法制备a-SiO_2薄膜的研究[J]. 武汉大学学报(理学版), 1999, 0(5) |
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| 作者姓名： | 张祖新 李伟 张文炳 |
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| 作者单位： | 武汉大学物理学系!武汉430072(张祖新，张文炳)，山东大学物理学系!济南250100(李伟) |
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| 基金项目： | 国家自然科学基金，教育部重点科学技术项目基金 |
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| 摘 要： | 低温衬底使器件在制膜过程中避免热伤害． 研究得到强水冷衬底的射频反应溅射法制备ａ－ＳｉＯ２ 薄膜的最佳工艺条件． 所制得的薄膜具有好的致密度和抗腐蚀性．
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| 关 键 词： | 非晶 二氧化硅 薄膜 射频反应溅射 |
Study of Preparing a-SiO_2 Films Using the Radio|Frequency Reactive Sputtering With the Substrate at Low Temperature |
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| ZHANG Zu|xin ,LI Wei ,ZHANG Wen|bing. Study of Preparing a-SiO_2 Films Using the Radio|Frequency Reactive Sputtering With the Substrate at Low Temperature[J]. JOurnal of Wuhan University:Natural Science Edition, 1999, 0(5) |
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| Authors: | ZHANG Zu|xin LI Wei ZHANG Wen|bing |
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| Affiliation: | ZHANG Zu|xin 1,LI Wei 2,ZHANG Wen|bing 1 |
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| Abstract: | The optimal preparing technologies were obtained for preparing a|SiO 2 films using the radiofrequency reactive sputtering with the substrate cooled by water.The compaction and anticorrsion are fine for prepared a|SiO 2 films.The advantage of preparing films at low temperature is avoiding heat damage for devices in prepqring process.; |
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| Keywords: | amorphous SiO _2 film RF reactive sputtering |
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