Hard X‐ray microbeam lithography using a Fresnel zone plate with a long focal length

Focused hard X‐ray microbeams for use in X‐ray nanolithography have been investigated. A 7.5 keV X‐ray beam generated at an undulator was focused to about 3 µm using a Fresnel zone plate fabricated on silicon. The focused X‐ray beam retains a high degree of collimation owing to the long focal length of the zone plate, which greatly facilitates hard X‐ray nanoscale lithography. The focused X‐ray microbeam was successfully utilized to fabricate patterns with features as small as 100 nm on a photoresist.