Composition optimization and UV‐annealing dependence on the electrical properties of Hf1−xSixO2/Si gate stacks |
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| Authors: | G He L D Zhang M Liu Q Fang |
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| Institution: | 1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;2. London Centre for Nanotechnology and Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK |
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| Abstract: | Hf1?xSixO2 gate dielectrics grown by UV‐photo‐induced chemical vapor deposition (UV‐CVD) using Hf(OBut)2(mmp)2 and tetraethoxysilane as precursors have been deposited on Si substrate. Composition dependence of the interfacial microstructure of the Hf1?xSixO2/Si gate stacks has been investigated via Fourier transform infrared spectroscopy (FTIR) systematically. It has been indicated that the physical properties of the Hf1?xSixO2 films can be effectively optimized by adjusting the silicon contents incorporated in the films. In order to evaluate its potential implementation as an alternative dielectric in future devices, detailed electrical characterization of Au/Hf1?xSixO2/Si capacitor has been performed as functions of the silicon contents and the UV‐annealing time. Copyright © 2010 John Wiley & Sons, Ltd. |
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| Keywords: | high‐k gate dielectrics chemical vapor deposition Fourier transform infrared spectroscopy electrical properties |
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