INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT

The growth characteristics of C₆₀ films were investigated in helium gas environment at pressures of 0, 2.667×10^-2 and 6.667×10^-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C₆₀ films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10^-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C₆₀ molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C₆₀ films were deposited on (001) plane of the fluorophlogopite substrate.