| GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件 |
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| 引用本文： | 吴荣汉 高文智. GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件[J]. 光子学报, 1995, 24(5): 388-392 |
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| 作者姓名： | 吴荣汉 高文智 |
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| 作者单位： | 国家集成光电子学联合实验室 中国科学院半导体所 北京 100083 |
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| 摘 要： | 采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阶(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器,其两态衬比度可达10dB.所研制的SEED器件,其导通光能耗低于10fJ/(μm)2,实现其光学双稳态及R-S光触发器工作。
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| 关 键 词： | 多量子阱 光调制器 S－SEED |
| 收稿时间： | 1994-07-02 |
GaAs/GaAlAs MULTIQUANTUM WELL REFLECTANCE MODULATOR AND SELF ELECTROOPTIC EFFECT DEVICE(SEED) |
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| Wu Ronghan,Gao Wenzhi,Zhao Jun,Duan Hailong,Lin Shiming,Zhong Zhantian,Huang Yongzhen,Wang Qinung. GaAs/GaAlAs MULTIQUANTUM WELL REFLECTANCE MODULATOR AND SELF ELECTROOPTIC EFFECT DEVICE(SEED)[J]. Acta Photonica Sinica, 1995, 24(5): 388-392 |
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| Authors: | Wu Ronghan Gao Wenzhi Zhao Jun Duan Hailong Lin Shiming Zhong Zhantian Huang Yongzhen Wang Qinung |
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| Affiliation: | NIOEL and NSPL, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | GaAs/GaAlAs MQW reflectance modulator and SEED device have been investigated. The analysis is emphasized on the combined bebavior of Quantum Confined Stark Effect(QCSE),DBR,asymmetric F-P cavity(ASFP)effect.Experimental results include:1).The fabricated modulator arraywith contrast ratio(7 dB～10 dB)and its application to the free space optically switching and interconnection. 2).Demonstration of bistability of a S-SEED array with optical switch energy less than 10fJ/(μm)2. |
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| Keywords: | MQW Light modulator S-SEED |
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