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| 拉曼光谱研究n型4H-和6H-SiC晶体的载流子浓度 | |
| 引用本文： | 王光红,施成营,冯敏,曹学伟,郝建民,王玉芳,杨素华. 拉曼光谱研究n型4H-和6H-SiC晶体的载流子浓度[J]. 光散射学报, 2007, 19(2): 108-113 |
| 作者姓名： | 王光红 施成营 冯敏 曹学伟 郝建民 王玉芳 杨素华 |
| 作者单位： | 1. 南开大学物理科学学院,天津,300071 2. 南开大学信息技术科学学院,天津,300071 3. 中国电子科技集团公司第四十六研究所,天津,300220 |
| 摘 要： | 半导体材料的纵光学声子与等离子体激元耦合模(LOPC模)能够提供材料电学方面的相关信息。本文在室温下测得了n型4H-和6H-SiC的拉曼光谱,分析了掺入的杂质对于SiC晶体拉曼光谱的影响,通过拟合n型4H-和6H-SiC晶体的LOPC模的线型得到等离子体频率,并由此从理论上计算了载流子浓度。载流子浓度的理论计算值与霍尔测量的结果符合得很好。研究结果进一步证实了对于n型4H-和6H-SiC晶体,可以通过分析LOPC模的线形来较准确地给出相关材料的载流子浓度。 |
| 关 键 词： | 拉曼光谱 SiC LOPC模 自由载流子浓度 |
| 文章编号： | 1004-5929（2007）02-0108-06 |
| 收稿时间： | 2007-01-26 |
| 修稿时间： | 2007-01-26 |
Characterization of the Free-carrier Concentrations in Doped n-type 4H-and 6H-SiC Crystals by Raman Scattering |
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| WANG Guang-hong,SHI Cheng-ying,FENG Min,CAO Xue-wei,HAO Jian-min,WANG Yu-fang,YANG Su-hua. Characterization of the Free-carrier Concentrations in Doped n-type 4H-and 6H-SiC Crystals by Raman Scattering[J]. Chinese Journal of Light Scattering, 2007, 19(2): 108-113 | |
| Authors: | WANG Guang-hong SHI Cheng-ying FENG Min CAO Xue-wei HAO Jian-min WANG Yu-fang YANG Su-hua |
| Affiliation: | 1.Department of Physics, Nankai University, Tianjin 300071, China ;2. College of Information Technical Science, Nankai University, Tianjin 300071, China ; 3.Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China |
| Abstract: | LO-phonon-plasmon-coupled modes provide us information on electronic properties in polar semiconductors.We obtained the Raman spectra of n-type 4H-and 6H-SiC crystals and analyzed the effect of doping on Raman spectra.We got the carrier concentrations and damping constants by line-shape fitting of the coupled modes of n-type 4H-and 6H-SiC and Hall measurements,respectively.The results obtained from the two methods agree fairly well.The results indicated that Raman scattering can give the reliable information about the carrier density by analysing the LOPC modes of n-type 4H-and 6H-SiC for low carrier concentrations. |
| Keywords: | Raman scattering SiC LOPC free-carrier concentrations |
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