| pnp高频高反压沟道基区全温晶体管设计与制造 |
| |
| 引用本文： | 丛众,仲玉林,朱肖林,汪永生.pnp高频高反压沟道基区全温晶体管设计与制造[J].固体电子学研究与进展,1987(1). |
| |
| 作者姓名： | 丛众 仲玉林 朱肖林 汪永生 |
| |
| 作者单位： | 辽宁大学物理系
(丛众，仲玉林)，成都星光电工厂
(朱肖林)，成都星光电工厂(汪永生) |
| |
| 摘 要： | 耗尽基区晶体管也称为双极静电感应晶体管(BSIT),其电流放大系数h_(FE)具有负的温度系数。双极结型晶体管(BJT)的h_(FE)具有正温度系数,将BSIJ与BJT并联,采用BJT常规工艺制造了pnp高频高反压沟道基区全温晶体管。 本文描述了这一器件的结构,工作原理,设计与制造。该器件的特点是:当温度T变化时,h_(FE)漂移较小。 测试结果表明,环境温度从25°升到180℃时,器件的h_(FE)随温度T变化率小于35％,优于同类型的常规双极结型晶体管,平均改善20％。当温室从25°降到-55℃时,器件的h_(FE)变化率小于或等于30％
|
Design and Fabrication of the p-n-p Channel-Base Transistor with High-Frequency,High-Breakdown-Voltage and Wider Temperature Range |
| |
| Abstract: | Using the normal planar technology of bipolar junction transistor, we have fabricated the p-n-p high-frequency, high breakdown voltage transistors which can operate in the wider temperature range from -55℃to 200℃. In the paper we also describe the design, structure and fabrication of the new device with a smaller drift of hFE when temperature is changed. The tested results show that the changing rate of hFE of the new device is less than or equals to 35% when the temperature is raised from 25℃ up to 180℃, which is 20% better than that of the normal bipolar transistor; Whereas the changing rate of hFE is less than or equals to 30% when temperature is fallen from 25℃down to -55℃. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
