Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV

Investigations of the sputtering of Al_xGa_1−x As semiconductor solid solutions by Ar⁺ ions with energies of 2–14 keV are performed. The dependence of the sputtering yield on the energy and angle of incidence of the ions are determined and the character of the surface relief formed during the sputtering is investigated. A comparison with theory shows that the best agreement between theory and experiment is achieved when the Haff-Switkowski formula is used together with Yudin’s stopping cross section. It is shown that the surface binding energies obtained differ from the atomization energies by an amount approximately equal to the amorphization energy. Zh. Tekh. Fiz. 67, 113–117 (June 1997)