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Electronic Transport in Nanostructures Consisting of Magnetic—Electric Barriers
引用本文:卢卯旺,颜晓红,等.Electronic Transport in Nanostructures Consisting of Magnetic—Electric Barriers[J].中国物理快报,2003,20(1):124-126.
作者姓名:卢卯旺  颜晓红
作者单位:[1]InstituteofSolidStatePhysics,ChineseAcademyofSciences,POBox1129,Hefei230031 [2]DepartmentofPhysics,XiangtanUniversity,Xiangtan411105
摘    要:We present a theoretical investigation on the transport properties of the nanostructures consisting of magneticelectric barriers produced by the deposition,on the top of a heterostructure,of metallic ferromagnetic stripe with an applied voltage.Both the transmission probability and the conductance are found to be greatly dependent upon the applied voltage.When a positive voltage is applied to the stripe,both the transmission probability and the conductance shift towards low-energy region and increase.Conversely,they move towards high-energy direction and reduce for an applied negative voltage.

关 键 词:纳米材料  电子传输  磁电势垒
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