Electronic Transport in Nanostructures Consisting of Magnetic—Electric Barriers |
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引用本文: | 卢卯旺,颜晓红,等.Electronic Transport in Nanostructures Consisting of Magnetic—Electric Barriers[J].中国物理快报,2003,20(1):124-126. |
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作者姓名: | 卢卯旺 颜晓红 |
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作者单位: | [1]InstituteofSolidStatePhysics,ChineseAcademyofSciences,POBox1129,Hefei230031 [2]DepartmentofPhysics,XiangtanUniversity,Xiangtan411105 |
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摘 要: | We present a theoretical investigation on the transport properties of the nanostructures consisting of magneticelectric barriers produced by the deposition,on the top of a heterostructure,of metallic ferromagnetic stripe with an applied voltage.Both the transmission probability and the conductance are found to be greatly dependent upon the applied voltage.When a positive voltage is applied to the stripe,both the transmission probability and the conductance shift towards low-energy region and increase.Conversely,they move towards high-energy direction and reduce for an applied negative voltage.
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关 键 词: | 纳米材料 电子传输 磁电势垒 |
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