High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser |
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| Authors: | Hashimoto Kohei Kannari Fumihiko |
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| Institution: | Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan. |
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| Abstract: | A cw Pr(3+):LiYF(4) laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector. |
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