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Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation
Authors:N. A. Tulina  A. N. Rossolenko  I. M. Shmytko  N. N. Kolesnikov  D. N. Borisenko  V. V. Sirotkin  I. Yu. Borisenko
Abstract:The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.
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