单向可控硅YCR008触发电流I_(GT)跳档的探讨

可控硅是可控硅整流器的简称。它能在高电压、大电流条件下工作,具有耐压高、容量大、体积小等优点,它是大功率开关型半导体器件,广泛应用在电力、电子线路中。可控硅分单向可控硅、双向可控硅。单向可控硅有阳极A、阴极K、控制极G三个引出脚。双向可控硅有第一阳极A1(T1),第二阳极A2(T2)、控制极G三个引出脚。触发电流IGT是可控硅的重要参数之一。可控硅根据触发电流IGT大小可分为很多档位,但实际根据触发电流IGT大小进行分档时,经常出现跳档现象。文章着重探讨单向可控硅YCR008触发电流IGT低档位(0.5~6)μA产品中有高档位(20~60)μA的产品跳档原因分析以及解决此问题的方案。

Research on Bin Mixture of Silicon Controlled Rectifier YCR008 IGT

SCR is the abbreviation of silicon controlled rectifier. It can work in high voltage and strong current, and have the advantages of bearing high voltage, big volumn and small space. SCR is the high power switching semiconductor device which is widely used in power and electrical circuit. SCR is usually one direction con- trolled while there is also two directions controlled which is called TRIAC. One direction SCR has three leads which are first anode A, second anode K and control lead G. TRIAC has three leads I which are first anode A1 (T1), second anode A2(T2) and control lead G. IGT is one of the important parameters of SCR. According to the volume of IGT , SCR can be devided into several bins, but actually in test bin mixture phenomenon happens very offen when deviding bins according to the volume of IGT. This article focuses on analysis and solutions of bin mixture between (0.5～6) μA and (20～60)μA YCR008 IGT products.