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TiW-Au金属化结构的金层剥离问题
引用本文:高能武,秦跃利,谢飞,孔祥栋.TiW-Au金属化结构的金层剥离问题[J].电子元件与材料,2000,19(3):41-41,43.
作者姓名:高能武  秦跃利  谢飞  孔祥栋
作者单位:西南电子设备研究所,四川,成都,610036
摘    要:Ti W- Au膜系结构可用于混合集成电路。Ti W与 Au的附着力对溅射气氛较敏感。采用合适的纯气 ,对气路加热抽真空 ,清洗真空腔 ,增加管路气阀等方法 ,可确保合适的溅射气氛 ,解决 Au层剥离的问题。真空腔体是否需要清洁处理 ,可用泄漏率评判

关 键 词:TiW-Au膜系结构  附着力  金属化

The problem of adherence between TiW and Au.
GAO Neng-wu,QIN Yue-li,XIE Fei,KONG Xiang-dong.The problem of adherence between TiW and Au.[J].Electronic Components & Materials,2000,19(3):41-41,43.
Authors:GAO Neng-wu  QIN Yue-li  XIE Fei  KONG Xiang-dong
Abstract:ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 3, P 41 42 (Jun 2000) In Chinese TiW Au thin film is widely applied to HIC's. The adherence between TiW and Au is dependent on the atmosphere of vacuum chamber. The problem of Au film peeling off is solved by cleaning gas pipe systems and vacuum chamber, adding gas valves to gas pipe systems and adopting gas of higher purity. Atmosphere in the chamber should be checked before sputtering. The cleanness of the chamber can be judged by the leakage rate of the system. (1 ref.)
Keywords:TiW-Au-film  adherence  metallization
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