636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes |
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| Authors: | Itaya K Ishikawa M Uematsu Y |
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| Institution: | Toshiba Res. & Dev. Centre, Kawasaki, Japan; |
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| Abstract: | 636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20 degrees C and CW operation of 3 mW was attained at up to 48 degrees C.<> |
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