Thermal conductivity and specific heat of bulk amorphous chalcogenides Ge20Te80−xSex (x = 0,1,2,8) |
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Authors: | Sheng-Nan Zhang Jian He Tie-Jun Zhu Terry M. Tritt |
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Affiliation: | a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38, Hangzhou 310027, PR China b Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, United States |
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Abstract: | Bulk amorphous chalcogenide samples of Ge20Te80−xSex (x = 0, 1, 2, 8) have been prepared using a melting-quench method, and characterized by the differential scanning calorimetry, X-ray powder diffraction, high-resolution transmission electron microscopy, specific heat and thermal conductivity measurements. The low temperature specific heat measurements identified some localized low-frequency oscillation modes (Einstein modes) in conjunction with a Debye-like behavior. It was found that with increasing Se concentration the characteristic Debye temperature did not change whereas the Einstein temperature slightly decreased. The lattice thermal conductivity of all Ge20Te80−xSex samples exhibited typical amorphous heat conduction behavior, which has been discussed in connection with the phonon mean free path and in the context of a phenomenological model of heat conduction for highly disordered system. |
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Keywords: | 61.43.Dq 61.05.cp 65.60.+a |
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