| CVD金刚石薄膜生长中的偏压增强成核效应 |
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| 引用本文： | 杨国伟. CVD金刚石薄膜生长中的偏压增强成核效应[J]. 物理, 1996, 25(5): 294-297 |
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| 作者姓名： | 杨国伟 |
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| 作者单位： | 湘潭大学现代物理研究所!湘潭 411105 |
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| 摘 要： | 实现金刚石薄膜的异质外延是目前ＣＶＤ金刚石薄膜制研究的主要奋斗目标，而直流负偏压增强金刚石成核法被认为是达到这一目标的有效途径。文章简要评述了微波等离子体ＣＶＤ制备金刚石薄膜中的直流负偏压增强成核法，以及由此而发展的直流正偏压增强成核法和叠加交流成分的直流负偏压增强成核法，介绍了它们在异质外延金刚石薄膜中的应用。
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| 关 键 词： | 金刚石 薄膜 偏压 成核 CVD |
Bias-Enhanced Nucleation in Diamond Film Growth by CVD |
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| Yang Guowei. Bias-Enhanced Nucleation in Diamond Film Growth by CVD[J]. Physics, 1996, 25(5): 294-297 |
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| Authors: | Yang Guowei |
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| Affiliation: | Yang Guowei |
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| Abstract: | Bias-enhanced nucleation methods have been suggested as the most hopeful way to realize the goal of heteroepitaxial growth of single - crystal diamond films. A review is presented of the negative and positive dc bias-enhanced nucleation methods, and the negative dc bias-enhanced method with an ac signal component in the growth of diamond films by microwave plasma chemical vapour deposition. |
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| Keywords: | diamond film bias nucleation |
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