| 金属单向诱导横向晶化激光修饰多晶硅薄膜晶体管 |
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| 引用本文： | 孟志国,王文,吴春亚,李娟,郭海成,熊绍珍,张芳.金属单向诱导横向晶化激光修饰多晶硅薄膜晶体管[J].半导体学报,2006,27(10):1794-1799. |
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| 作者姓名： | 孟志国 王文 吴春亚 李娟 郭海成 熊绍珍 张芳 |
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| 作者单位： | 南开大学信息学院光电子所，天津市光电子薄膜器件与技术重点实验室，教育部光电子信息科学与技术重点实验室，天津 300071;香港科技大学电机电子工程系，香港;南开大学信息学院光电子所，天津市光电子薄膜器件与技术重点实验室，教育部光电子信息科学与技术重点实验室，天津 300071;南开大学信息学院光电子所，天津市光电子薄膜器件与技术重点实验室，教育部光电子信息科学与技术重点实验室，天津 300071;香港科技大学电机电子工程系，香港;南开大学信息学院光电子所，天津市光电子薄膜器件与技术重点实验室，教育部光电子信息科学与技术重点实验室，天津 300071;科技部高技术研究发展中心，北京 100044 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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国家自然科学基金
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天津市自然科学基金 |
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| 摘 要： | 对采用金属诱导单一方向横向晶化(metal induced unilaterally crystallization,MIUC)并结合激光后退火技术,以提高多晶硅薄膜晶体管的性能,进行了深入研究.MIUC薄膜晶体管已具有良好的器件性能和均匀性,再加以三倍频YAG激光退火后的MIUC薄膜晶体管,其场效应迁移率则可提高近一倍.器件的多种性能和参数的均匀性与所用修饰性的激光处理条件密切相关,具有规律性,故而是可控的,这为工业化技术的掌控提供了基础.
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| 关 键 词： | 金属单向诱导横向晶化 多晶硅薄膜晶体管 三倍频YAG固体激光器 激光修饰 金属单向诱导横向晶化 激光退火 修饰性 多晶硅薄膜晶体管 Transistors Silicon Thin Film Polycrystalline 工业化技术 规律 相关 处理条件 参数 器件性能 场效应迁移率 三倍频 均匀性 研究 退火技术 激光后 结合 |
| 文章编号： | 0253-4177(2006)10-1794-06 |
| 收稿时间： | 03 21 2006 12:00AM |
| 修稿时间： | 06 27 2006 12:00AM |
Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors |
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| Meng Zhiguo,Wong Man,Wu Chuny,Li Juan,Kwok H S,Xiong Shaozhen and Zhang Fang.Laser Post-Treated Metal-Induced Unilaterally CrystallizedPolycrystalline Silicon Thin Film Transistors[J].Chinese Journal of Semiconductors,2006,27(10):1794-1799. |
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| Authors: | Meng Zhiguo Wong Man Wu Chuny Li Juan Kwok H S Xiong Shaozhen and Zhang Fang |
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| Institution: | Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-ElectronicInformation Science and Technology of the Ministry of Education,Institute of Photo-Electronics,College of Information,Nankai University,Tianjin 3;Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-ElectronicInformation Science and Technology of the Ministry of Education,Institute of Photo-Electronics,College of Information,Nankai University,Tianjin 3;Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-ElectronicInformation Science and Technology of the Ministry of Education,Institute of Photo-Electronics,College of Information,Nankai University,Tianjin 3;Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-ElectronicInformation Science and Technology of the Ministry of Education,Institute of Photo-Electronics,College of Information,Nankai University,Tianjin 3;The Conter of Research and Development for High Technology,MOST,Beijing 100044,China |
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| Abstract: | Post-treated metal-induced unilaterally crystallized(MIUC) poly-Si technology using a triple frequency YAG solid-state laser is discussed in detail.It is found that MIUC TFT has good performance and uniformity.By using the triple frequency YAG laser post-treatment,the performance of the MIUC TFT can be further enhanced.The field-mobility of the MIUC TFT increases almost by a factor of two. In addition,the improvement of the performance and the uniformity of the post-treated TFTs are correlated to the modified laser condition and vary regularly,which implies that the laser post-treatment is controllable.This provides a foundation for industrialization. |
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| Keywords: | :metal-induced unilateral crystallization polycrystalline silicon TFT triple frequency solid-state laser laser post-treatment |
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