| Cu(In,Ga)Se_2薄膜表面镓(Ga)含量分布对太阳电池性能的影响 |
| |
| 引用本文： | 王赫,刘芳芳,孙云,何青,张毅,李长健.Cu(In,Ga)Se_2薄膜表面镓(Ga)含量分布对太阳电池性能的影响[J].人工晶体学报,2010,39(1):52-56. |
| |
| 作者姓名： | 王赫 刘芳芳 孙云 何青 张毅 李长健 |
| |
| 作者单位： | 南开大学光电子薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,天津,300071 |
| |
| 基金项目： | 天津市重大科技攻关项目(05YFGZGX03400);;国家高技术发展计划(863)项目(2004AA513020);;天津市科技创新专项资金项目(06FZZDGX01200) |
| |
| 摘 要： | 本文利用三步法共蒸发制备Cu(In,Ga)Se_2多晶薄膜吸收层,通过改变第三步Ga的蒸发温度控制薄膜表面Ga的含量及其分布.随着吸收层表面Ga含量的增大,空间电荷区带隙变宽,电池的开路电压V_(oc)明显增大.同时,Ga的梯度分布有效地扩宽了吸收层的光谱响应范围,减小了由于禁带宽度增大所引起的短路电流J_(sc)的损失,从而有效地提高了电池的转换效率.
|
| 关 键 词： | Ga梯度分布 吸收层表面 开路电压V_(oc) 短路电流J_(sc) |
Gallium Grading on the Surface of Cu(In,Ga)Se_2 Absorber and Its Effects on the Performance of Solar Cells |
| |
| WANG He,LIU Fang-fang,SUN Yun,HE Qing,ZHANG Yi,LI Chang-jian.Gallium Grading on the Surface of Cu(In,Ga)Se_2 Absorber and Its Effects on the Performance of Solar Cells[J].Journal of Synthetic Crystals,2010,39(1):52-56. |
| |
| Authors: | WANG He LIU Fang-fang SUN Yun HE Qing ZHANG Yi LI Chang-jian |
| |
| Institution: | Tianjin Key Laboratory of Photoelectronic Thin Film Device and Technology;Institute of Photo-electronic Thin Film Device and Technology;Nankai University;Tianjin 300071;China |
| |
| Abstract: | Cu(In,Ga)Se2 thin films were prepared by three-stage co-evaporation process.By changing the source temperature of gallium in the third step,the gallium contents and distribution on the surface of the absorbers could be controlled.With the increase of gallium content on the surface of the thin film,the band gap of Space Charge Region (SCR) was elevated,which resulted in the increase of the open circuit voltage of solar cells.In addition,as gallium grading expanded the range of spectrum response of CIGS thin ... |
| |
| Keywords: | gallium grading the surface of absorbers open circuit voltage Voc short circuit current Jsc |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
| 点击此处可从《人工晶体学报》下载免费的PDF全文 |
|
