A Facile and Universal Top‐Down Method for Preparation of Monodisperse Transition‐Metal Dichalcogenide Nanodots |
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Authors: | Xiao Zhang Zhuangchai Lai Zhengdong Liu Chaoliang Tan Ying Huang Dr. Bing Li Dr. Meiting Zhao Prof. Linghai Xie Prof. Wei Huang Prof. Hua Zhang |
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Affiliation: | 1. Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore);2. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) http://www.ntu.edu.sg/home/hzhang/;3. Key Laboratory for Organic Electronics and Information Display (KLOEID) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210046 (China);4. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 117602 (Singapore);5. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816 (China) |
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Abstract: | Despite unique properties of layered transition‐metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N‐methyl‐2‐pyrrolidone when post‐treated with n‐hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof‐of‐concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write‐once‐read‐many behavior. These high‐quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine. |
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Keywords: | memory devices nanodots quantum dots transition metal dichalkogenides two‐dimensional materials |
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