| 电沉积法制备CdS薄膜及其性能研究 |
| |
| 引用本文： | 葛艳辉,史伟民,魏光普,徐菁,邱永华. 电沉积法制备CdS薄膜及其性能研究[J]. 人工晶体学报, 2006, 35(4): 867-870 |
| |
| 作者姓名： | 葛艳辉 史伟民 魏光普 徐菁 邱永华 |
| |
| 作者单位： | 上海大学电子信息材料系,上海,200072;上海大学电子信息材料系,上海,200072;上海大学电子信息材料系,上海,200072;上海大学电子信息材料系,上海,200072;上海大学电子信息材料系,上海,200072 |
| |
| 基金项目： | 上海市科委重点科研计划项目(No.03DZ12033) |
| |
| 摘 要： | 采用电沉积法制备了CdS薄膜.分别用XRD及SEM分析了薄膜的结构和表面形貌.研究了不同温度和不同沉积电压对薄膜表面硫与镉的化学成分比的影响.最佳的沉积电压为2.5～3V之间.制作了ITO/n-CdS/p-SnS/Ag结构的太阳能电池,在100mW/cm2的光强下其开路电压0.2V,短路电流13.2mA/cm2,填充因子0.31,转换效率0.81;.
|
| 关 键 词： | CdS 电沉积 太阳能电池 |
| 文章编号： | 1000-985X（2006）04-0867-04 |
| 收稿时间： | 2005-10-23 |
| 修稿时间： | 2005-10-232005-11-22 |
Preparation and Characterization of Electrodeposited CdS Thin Films |
| |
| GE Yan-hui,SHI Wei-min,WEI Guang-pu,XU Jing,QIU Yong-hua. Preparation and Characterization of Electrodeposited CdS Thin Films[J]. Journal of Synthetic Crystals, 2006, 35(4): 867-870 |
| |
| Authors: | GE Yan-hui SHI Wei-min WEI Guang-pu XU Jing QIU Yong-hua |
| |
| Affiliation: | Department of Electronic Information Materials, Shanghai University, Shanghai 200072, China |
| |
| Abstract: | CdS thin films were obtained by electrodeposition.The structure and surface morphology of the films was studied by X-ray diffraction(XRD) and scanning electron microscope(SEM) method respectively.The influence of different applied potential and temperature on the stoichiometry of the CdS films was investigated.The optimal applied potential was about 2.5-3.0V.The solar cells with the structure of ITO/n-CdS/p-SnS/Ag have been made.The photovoltaic properties of a open-circuit voltage of 0.2V,a short-circuit current of 13.2mA/cm~2,a filling factor of 0.31,and a conversion efficiency of(0.81%) were obtained under the illumination of 100mW/cm~2. |
| |
| Keywords: | CdS electrodeposition solar cells |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
|
点击此处可从《人工晶体学报》下载全文 |
|
