Doping density striation effects in studies of the metal-nonmetal transition in heavily doped semiconductors

Significant oscillatory doping density inhomogeneities - striations - are reportedly a commonplace phenomenon in germanium and silicon crystals. Schottky barrier tunneling data on heavily doped and irradiation compensated silicon are presented which are consistent with the presence of such striations. The need for considering striations in studies of the metal-nonmetal transition is emphasized.