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Low-lying levels in 120Sb studied with the 120Sn(p,nγ) reaction
Authors:Minoru Adachi  Teiichiro Matsuzaki  Hiroshi Taketani
Institution:Department of Applied Physics, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo, Japan
Abstract:Properties of the levels in 120Sb have been studied with the reaction 120Sn(p, nγ). The low-lying level scheme of 120Sb below 450 keV was constructed from the γ-ray excitation functions and γ-γ coincidences. The spins and parities were assigned from comparisons of the measured angular distributions and linear polarizations of the deexciting γ-rays as well as the absolute excitation functions of the residual levels with the predictions of the statistical compound nucleus model. In addition, the half-life of an isomeric state at 78.15 keV was measured. The results are 8.37 keV, 2?; 78.15 keV, 3+; T12 = 241±3 ns; 149.29 keV, 3+; 166.05 keV, 3?; 192.64 keV, 2+; 233.06 keV, 2+; 243.80 keV, 4; 260.29 keV, 3?; 261.68 keV, 4; 334.07 keV, 4; 341.14 keV, 5; 343.21 keV, 4; 390.31 keV, 2 or 3+; 437.68 keV, 1 or 2 and 447.68 keV, 1(+).
Keywords:Nuclear reactions
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