Free carrier absorption in a ferromagnetic semiconductor below Curie temperature

The free carrier absorption (FCA) in a non-degenerate ferromagnetic semiconductor due to electron-two-magnon scattering is calculated below the Curie temperature, assuming a wide conduction band model. It has been found that in EuO FCA due to two-magnon scattering is proportional to λ^2·1 (wavelength of radiation) and it has been noticed that for high conductivity samples, explanation of FCA requires the inclusion of ionized impurity scattering of electrons besides the two-magnon process.