Nonthermal pulsed laser annealing of Si; plasma annealing |
| |
| Authors: | JA Van Vechten R Tsu FW Saris |
| |
| Institution: | IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA;FOM Instituut voor Atoom- en Molecuulfysica, Amsterdam, The Netherlands |
| |
| Abstract: | In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
