Influence of inhomogeneous distribution of the minority carriers on the doping dependence of the threshold current in EBP lasers using n-type GaAs at 300°K |
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| Authors: | S. RakshitS.N. Biswas A.N. Chakravarti |
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| Affiliation: | Institute of Radio Physics and Electronics, University College of Technology, 92 Acharya Prafulla Chandra Road, Calcutta 9, India |
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| Abstract: | The influence of inhomogeneous distribution of the minority carriers on the doping dependence of the threshold current in electron-beam-pumped (EBP) lasers using n-type GaAs at 300°K is studied theoretically. It is found that when inhomogeneity exists, the threshold current is weakly dependent on the doping concentration in agreement with the experimental observation. |
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