单根ZnO纳米线低温条件下的电子输运及光敏性质

用化学气相沉积的方法合成了ZnO纳米线，采用微栅模板法制得电极从而获得欧姆接触的单根ZnO纳米线半导体器件。通过研究60~300 K范围内的电阻变化情况，发现在整个温度区间内存在热激活和近程跳跃两种传输机制。在300，200，100 K的条件下分别测试了器件的紫外光响应和恢复情况，结果表明：低温下器件对紫外光的敏感性提高，电流的恢复时间随着温度的降低而延长。

Electrical Properties and Photosensitivity of Single ZnO Nanowire at Low Temperatures

ZnO nanowires were synthesized by chemical vapor deposition method, and single ZnO nanowire semiconductor devices with Ohmic contact electrodes were fabricated using the micro grid template method. The electrical properties of the device were investigated at low temperatures. The results show that there are two types of transport mechanism: thermal activation and nearest-neighbor hopping mechanism from 300 to 60 K. The properties of ultraviolet light response and recovery of the device were tested at 300, 200, and 100 K, respectively. The results show that the sensitivity of the device to ultraviolet is improved at low temperature, and the current recovery time increases with the temperature falling down.