Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (3 1 1)A surface |
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Authors: | M D Efremov V A Volodin V A Sachkov V V Preobrazhenskii B R Semyagin D V Marin R S Matvienko N N Ledentsov I P Soshnikov D Litvinov A Rosenauer D Gerthsen |
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Institution: | a Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia;b A.F. Ioffe Institute of the RAS, Politechnicheskaya 26, 194021, St.-Peterburg, Russia;c Laboratory of Electron Microscopy, University of Karlsruhe, Germany |
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Abstract: | (3 1 1)A GaAs/AlAs corrugated superlattices (CSLs) and satellite (3 1 1)B and (1 0 0) SLs were studied using Raman spectroscopy, high-resolution transmittance electron microscopy (HRTEM) and photoluminescence (PL). The thickness of GaAs layers was varied from 1 monolayer (ML) to 10 ML, the thickness of AlAs barriers was 10 ML in (3 1 1) direction. The strongest modification of the Raman spectra is found for the case of partial (<1 nm) GaAs filling of the AlAs surface. The calculated and experimental Raman spectra demonstrated a good agreement for both complete (1 nm) and partial (<1 nm) GaAs filling of the AlAs surface. According to Raman and HRTEM data, in the case of partial filling of (3 1 1)A AlAs surface, GaAs forms quantum well wires of finite length (quantum dots). A drastic difference of PL from grown side-by-side (3 1 1)A and (3 1 1)B SLs was observed. A strong room temperature PL in the green–yellow spectral region was observed in GaAs/AlAs (3 1 1)A CSLs containing GaAs type-II quantum dots. |
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Keywords: | 3 1 1 GaAs/AlAs superlattices Phonons Photoluminescence |
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