Charge storage and electron/light emission properties of silicon nanocrystals |
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Authors: | S. Oda S.Y. Huang M.A. Salem D. Hippo H. Mizuta |
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Affiliation: | aQuantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan |
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Abstract: | Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission.Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers. |
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Keywords: | Silicon nanocrystals Single electron memory devices Photo luminescence |
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