InP native oxide: A drift factor in InP-MIS |
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| Authors: | V.V. Pham, D. Esteve, J. Farr , A. El Mahdy, M. Ronda,J.J. Simonne |
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| Affiliation: | Laboratoire d'Automatique et d'Analyse des Systèmes, 7 Avenue du Colonel Roche, 31077, Toulouse Cedex, France |
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| Abstract: | It is shown that a native oxide in a InP-MIS structure is a key parameter in the time instability of the device. This is demonstrated in experiments on Al/SiO2/native oxide/InP structures with different native oxide thicknesses. A minimum of the flat-band voltage drift is observed for thicknesses close to 30 Å. A model which considers traps distributed as a continuum of states in the insulator and tunneling with the InP surface channel is consistent with these results. |
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