Preparation and Transparent Property of the n—ZnO／p—Diamond Heterostructure

Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time.The electrodes of the n-and p-type semiconductors are experimentally verified to be ohmic.The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to 2V.The turn-on voltage of the diode is 0.34V and the highest current is about 5.0mA as the forward voltage reaches 2V.Moreover,the diode is optically transparent in the region of 500-700nm wavelength.