An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor |
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Authors: | Jung-Hui Tsai Shiou-Ying Cheng Lih-Wen Laih Wen-Chau Liu Hao-Hsiung Lin |
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Affiliation: | aDepartment of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, Republic of China;bDepartment of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China |
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Abstract: | A new Al0.48In0.52As/ Ga0.47In0.53As heterostructure-emitter bipolar transistor (HEBT) with a very low offset voltage of 40 mV has been fabricated by molecular beam epitaxy. From the theoretical analysis and experimental results, it is found that a 500-Å thick emitter used in the studied device can effectively eliminate the potential spike at the N–AlInAs/n–GaInAs heterointerface. However, a degenerate current gain of about 25 is obtained, attributed to the increase of recombination current at the neutral-emitter regime. This is caused by the short hole diffusion length of GaInAs, which reduces the emitter injection efficiency. Due to the small surface recombination velocity, the emitter edge-thinning design is not essential to improve the device performance of our proposed AlInAs/GaInAs HEBT. |
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Keywords: | heterostructure-emitter bipolar transistor (HEBT) potential spike neutral-emitter recombination current |
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