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Metal Chemical Vapor Deposition: Design and Synthesis of New Source Reagents for Osmium Thin Films
Authors:YU HuanLi  CHOU TsungYi  CHI Yun
Abstract:Treatment of β-diketone ligands, such as hfacH (hexafluoroacetylacetone) or tmhdH (2,2-dimethyl-3,5-heptanedione), with binary metal carbonyls Ru3(CO)12 or Os3(CO)12 in a stainless steel autoclave at elevated temperature afforded the corresponding mononuclear Ru or Os complexes 1, 2 and 3 in good yields. A second type of mononuclear Os CVD source reagent 4 has also been obtained from a reaction of Os3(CO)12 with 3 eq. of iodine under CO atmosphere. These four Ru and Os CVD source complexes are all relatively stable and highly volatile; thus, they can be utilized for depositing the respective metal thin-films with overall quality comparable or better than those deposited using the commercially available source reagents. The surface morphology, the purity and the crystallinity were identified by SEM micrograph, X-ray photoelectron spectroscopy, conductivity measurement and powder XRD, respectively. Possible reaction mechanisms leading to the formation of the metal deposit are presented.
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