Studies of GaAs surface roughness and organic masks resistance depending on the ion-beam energy |
| |
Authors: | B Walkow H W Loeb J Freisinger and C Mößner |
| |
Institution: | (1) Minsk Radioengineering Institute, USSR;(2) University of Giessen, W-6300 Giessen, Federal Republic of Germany;(3) University of Kaiserslautern, W-6750 Kaiserslautern, Federal Republic of Germany |
| |
Abstract: | Summary The development of AIII–BV semiconductor surfaces exposed to ion-beam irradiation in the ion energy range from 100 to 1000 eV and the ion current density of 1 mA/cm2 (max) is investigated. The ion-beam etching with an ion energy of 1 keV results in sharp cones and needles on the semiconductor surface due to the surface contamination and unevenness. Etching with ion-beam energies in the order of 300 eV and with etch rates higher than 1000 /min produces relatively even GaAs surfaces. In case of reactive gases (i.e. CCl2F2 and the mixture of CCl2F2+Ar) ion-beam etching results in significantly higher etch rates; however, the mask residue contains Cl and F. In studies on the ion-beam resistance of organic masks selectivities as high as 13:1 for the photoresist CM-79 with an ion energy of 180 eV and an ion current density of approximately 0.3 mA/cm2 were achieved. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |