Fabrication of high-aspect-ratio silicon nanostructures using near-field scanning optical lithography and silicon anisotropic wet-etching process

A new process in which near-field scanning optical lithography (NSOL) is combined with anisotropic wet-etching of (110) silicon is developed for the fabrication of high-aspect-ratio (HAR) nanochannels. In the proposed process, NSOL is applied to produce nanopatterns on a commercial positive photoresist as in an optical lithography. The use of a commercial photoresist is an advantage of this process because it allows the direct application of many photoresists currently available without pretreatment, saving cost and time. A bare (110) silicon wafer coated with a thin Si₃N₄ layer, of approximately 10 nm thickness, is used as the sample and the photoresist is spincoated on the Si₃N₄ layer to a thickness of about 50–80 nm. Nanopatterning of the photoresist using a contact mode NSOL, transfer of the photoresist pattern onto the Si₃N₄ layer by reactive ion etching, and anisotropic wet etching of the silicon wafer using the patterned Si₃N₄ layer as an etch mask, lead to the intended HAR nanostructures. Fabrication of silicon nanochannels with a channel width below 150 nm and an aspect ratio greater than 3 is demonstrated. PACS 81.16.Nd; 81.16.Rf; 85.40.Hp