高能质子源靶用氢化铒薄膜制备过程影响因素

采用两步法制备了高能质子源靶用氢化铒薄膜。并研究了氢化时间、氢化速度等因素对氢化铒薄膜质量的影响。XRD结果显示,只有氢化时间超过24 h才能获得较纯净的氢化铒薄膜。将氢化反应温度和氢气压力控制在适当范围内，使得铒薄膜缓慢被氢化并使得氢化过程所产生的应力缓慢释放，可获得较完整的氢化铒薄膜。所获得的5~15 μm氢化铒薄膜已经应用于高能质子束的产生实验，取得了良好的实验结果。

Factors influencing fabrication of erbium hydride films used as targets to generate high energy proton beams

Erbium hydride films were prepared via two steps. In the process, the erbium films fabricated via rolling reacted with hydrogen under high temperature and the hydrogenation process should last more than 24 hours for quality consideration. The hydrogen pressure and the reaction temperature play key roles in the fabrication process, and fine erbium hydride films can be obtained under proper control of the two factors when the hydrogenation process and the release of the stress generated in hydrogenation are both slow. The derived fine erbium hydride films with thickness of 5 to 15 μm have been used as the targets in experiments to produce high energy proton beams bringing good experimental results.