Current spreading effects in 680-nm-band self-sustained pulsating AlGalnP visible laser diodes |
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Authors: | H. Adachi S. Kamiyama I. Kidoguchi |
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Affiliation: | (1) Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd, 3-1-1 Yagumo-Nakamachi, 570 Moriguchi, Osaka, Japan |
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Abstract: | We have developed 680-nm-band AlGalnP visible laser diodes having very lowintensity noise with stable self-sustained pulsation. The pulsation characteristics were affected by current spreading outside the ridge stripe. We obtained AlGalnP visible laser diodes with stable self-sustained pulsation by optimizing the ridge structure. The lasers achieved relative intensity noise (RIN) as low as-136 dB Hz–1 in the temperature range 20–50°C at 3 mW. |
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