| Terahertz generation from Si3N4 covered photoconductive dipole antenna |
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| 引用本文： | 施卫,Jingzhou Xu,X.-C.Zhang. Terahertz generation from Si3N4 covered photoconductive dipole antenna[J]. 中国光学快报(英文版), 2003, 1(5) |
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| 作者姓名： | 施卫 Jingzhou Xu X.-C.Zhang |
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| 作者单位： | Department of Applied Physics，Xi'an Universty of Technology，Xi'an 710048，Center for Terahertz Research，Rensselaer Polytechnic Institute，Troy，NY 12180，USA，Center for Terahertz Research，Rensselaer Polytechnic Institute，Troy，NY 12180，USA |
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| 基金项目： | This work is supported by the National Natural Science Foundation of China (No. 50077017) and the U.S.National Science Foundation. X.-C. Zhang is the author to whom the correspondence should be addressed, |
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| 摘 要： | We observe enhanced terahertz (THz) radiation generated from a Si3N4 film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si3N4 film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si3N4 film-coated layer.
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Terahertz generation from Si3N4 covered photoconductive dipole antenna |
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| Jingzhou Xu,X.-C.Zhang. Terahertz generation from Si3N4 covered photoconductive dipole antenna[J]. Chinese Optics Letters, 2003, 1(5) |
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| Authors: | Jingzhou Xu X.-C.Zhang |
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| Abstract: | We observe enhanced terahertz (THz) radiation generated from a Si3N4 film-coated GaAs photoconductivedipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitationpower, the Si3N4 film-coated antenna has a higher effective DC resistance and larger breakdown voltage.As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si3N4film-coated layer. |
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