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Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate |
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| Authors: | YANG Dechao ;LIANG Hongwei ;QIU Yu ;LI Pengchong ;LIU Yang ;SHEN Rensheng ;XIA Xiaochuan ;YU Zhennan ;CHANG Yuchun ;ZHANG Yuantao ;DU Guotong |
| Institution: | [1]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P. R. China; [2]Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116024, P. R. China; [3]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, P. R. China; [4]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China; [5]Zhejiang Crystal-optech Co., Ltd., Taizhou 318015, P. R. China |
| Abstract: | Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition. A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat, and the distribution morphology of GaN had significantly changed after it was recrystallized. GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level. |
| Keywords: | Patterned sapphire substrate GaN Selective growth Crystallographic plane |
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